indie (former EXALOS), headquartered in the Zurich area, Switzerland, is proud to announce the development of single-frequency laser diode (LD) devices based on a proprietary monolithic distributed feedback (DFB) design, utilizing GaN compound semiconductors. This breakthrough in design represents a pioneering advancement in laser diode technology, delivering superior wavelength control and stability.
This innovative technology, which operates across a wavelength range from near UV (390nm) to green (535nm), represents a major leap forward in the field of single-frequency light sources. Its wavelength-agnostic design ensures exceptional control and stability of lasing wavelengths and narrow linewidth over a wide range of output power levels.
This is the first DFB LD of our portfolio, with single transverse-mode operation and with an emission wavelength of 450nm, and is currently undergoing extensive life-testing at power levels of 30-50 mW. To date, the prototypes have exhibited exceptional stability with minimal signs of degradation, after more than 1,500 hours of continuous operation.
indie offers a portfolio of cutting-edge single-frequency lasers in multiple formats to suit diverse applications such as Spectroscopy, Communication, Quantum, Sensing, Ranging, and Holography. Options include uncooled TO-can modules and temperature-controlled units with either fiberized or free-space collimated outputs.
“We are excited to bring this revolutionary laser technology to the market,” said Philipp Vorreau, General Manager at EXALOS. “Our proprietary design not only delivers superior wavelength control and stability but also provides unparalleled versatility for applications requiring high wavelength precision and reliability.”